Conductive pad structure for hybrid bonding and methods of forming same

ABSTRACT

A representative device includes a patterned opening through a layer at a surface of a device die. A liner is disposed on sidewalls of the opening and the device die is patterned to extend the opening further into the device die. After patterning, the liner is removed. A conductive pad is formed in the device die by filling the opening with a conductive material.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No.14/133,328, filed on 18 Dec. 2013, entitled “Conductive Pad Structurefor Hybrid Bonding and Methods of Forming Same,” which application ishereby incorporated by reference.

TECHNICAL FIELD

The present invention relates generally to bonding, and, in particularembodiments, a conductive pad structure for hybrid bonding and methodsof forming same.

BACKGROUND

Typically, in a semiconductor device, various electronic components(e.g., transistors, diodes, resistors, capacitors, and the like) areformed in device dies on a wafer. These device dies may then be sawedand bonded to other device dies to form functional devices. For example,in image sensing technologies, a complementary metal-oxide semiconductor(CMOS) image sensor (CIS) may include pixel arrays (e.g., connected tophoto diodes) formed on one device die, and logical control circuits maybe formed on another device die. These separate dies may be bondedtogether using a hybrid bonding process to form a functional device.Hybrid bonding is also used in other applications to form threedimensional integrated circuits (3DICs) where multiple dies are stackedon one another.

In hybrid bonding, conductive pads on a top surface of one die may bedirectly bonded to conductive pads on a top surface of the other die,for example, using fusion bonding and annealing processes. However, as aresult of the annealing process, the material of the conductive pads maybe stretched (e.g., as a result of increased ductility) and voids may beformed between the bonded conductive pads, especially in the cornerregions.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 illustrates a cross-sectional view of a device die in accordancewith various embodiments;

FIG. 2 illustrates a cross-sectional view of patterning an opening inthe device die in accordance with various embodiments;

FIG. 3 illustrates a cross-sectional view of forming a liner over thedevice die and in the opening in accordance with various embodiments;

FIG. 4 illustrates a cross-sectional view of extending the openingfurther into the device die in accordance with various embodiments;

FIG. 5 illustrates a cross-sectional view of removing the liner from thedevice die in accordance with various embodiments;

FIG. 6 illustrates a cross-sectional view of filling the opening in thedevice die with a conductive material in accordance with variousembodiments;

FIG. 7 illustrates planarizing a surface of the device die in accordancewith various embodiments;

FIG. 8A illustrates bonding an oxide layer of the device die to anotheroxide layer of another device die in accordance with variousembodiments;

FIG. 8B illustrates a top-down view of a bonding tool, which may be usedto bond the device dies in accordance with various embodiments;

FIG. 9 illustrates bonding conductive pads of the device dies inaccordance with various embodiments;

FIG. 10 illustrates a flow chart of a process flow for formingconductive pads and hybrid bonding device dies in accordance withvarious embodiments; and

FIG. 11A through 11C illustrate varying views of a bonded image sensingdevice in accordance with various embodiments.

Corresponding numerals and symbols in the different figures generallyrefer to corresponding parts unless otherwise indicated. The figures aredrawn to clearly illustrate the relevant aspects of the embodiments andare not necessarily drawn to scale.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the embodiments of the disclosure are discussedin detail below. It should be appreciated, however, that the embodimentsprovide many applicable inventive concepts that can be embodied in awide variety of specific contexts. The specific embodiments discussedare merely illustrative, and do not limit the scope of the disclosure.

A conductive pad structure for hybrid bonding and the method of formingthe same are provided in accordance with an embodiment. The intermediatestages of manufacturing an embodiment are illustrated. The variations ofthe embodiments are then discussed.

Embodiments will be described with respect to a specific context, namelyhybrid bonding of stacked device dies for image sensing. Otherembodiments may also be applied, however, to other applications ofbonding device dies such as in 3DIC packages.

FIGS. 1 through 9 illustrate cross-sectional views of intermediary stepsof forming a conductive pad for hybrid bonding in accordance withvarious embodiments. FIG. 1 illustrates a cross-sectional view of aportion of a first device die 100. In image sensing technologies, firstdevice die 100 may include photodiodes interconnected to form a pixelarray. First device die 100 includes a substrate 102, which may be abulk silicon substrate although other semiconductor materials includinggroup III, group IV, and group V elements may also be used.Alternatively, substrate 102 may be a silicon-on-insulator (SOI)substrate. Active devices (not shown) such as transistors andphotodiodes may be formed on the top surface of substrate 102.

First device die 100 further includes interconnect layers 104 formedover substrate 102. Interconnect layers 104 may include an inter-layerdielectric (ILD) and/or inter-metal dielectric layers (IMD) containingconductive features (e.g., metal lines and vias, not shown) formed oversubstrate 102 using any suitable method. Interconnect layers 104 mayconnect various active devices in substrate 102 to form functionalcircuits. The ILD/IMDs may comprise low-k dielectric materials having kvalues, for example, lower than about 4.0 or even 2.8. In someembodiments, interconnect layers 104 may comprise un-doped silicateglass (USG), and the like. Interconnect layers 104 may have a thicknessof about 2200 Å although the actual dimensions of interconnect layers104 may vary depending on layout design.

An isolation layer 106 may be formed over interconnect layers 104.Isolation layer 106 may comprise silicon nitride, silicon oxide, or thelike. Isolation layer 106 may have a thickness of about 500 Å, althoughthe actual dimension isolation layer 106 may vary depending on layoutdesign.

Redistribution layers (RDLs) 108 may be formed over isolation layer 106.RDLs 108 may comprise polymer layers or dielectric layers (e.g.,comprising USG) having interconnect structures (e.g., metal lines andvias) that route the electrical circuits formed in interconnect layers104 to desired locations in first device die 100. RDLs 108 may have athickness of about 3000 Å, although the actual dimensions RDLs 108 mayvary depending on layout design.

An oxide layer 110 is formed on a top surface of first device die 100.Oxide layer 110 may comprise silicon oxynitride (SiON), SiO₂, SiN, SiC,or the like. Oxide layer 110 may have a thickness of about 3000 Å andmay be used as a bonding interface layer for bonding first device die100 to another device die during a subsequent hybrid bonding process(described further herein in FIGS. 8 and 9). Although oxide layer no isdescribed herein as an oxide layer, any interfacial layer suitable fordirect bonding to another interfacial layer (e.g., through fusionbonding) may be used in alternative embodiments in lieu of an oxide.

FIG. 2 illustrates the patterning of first device die 100 to form anopening 112 for a conductive pad. First device die 100 may be patterned,for example, using a combination of photolithography and etching. WhileFIG. 2 illustrates opening 112 extending through oxide layer 110 intoRDLs 108, the layers of first device die 100 that are patterned foropening 112 may vary depending on a desired depth of opening 112. Forexample, opening 112 may have a depth from a top surface of first devicedie 100 of between about 0.1 μm and about 1 μm.

FIG. 3 illustrates the formation of a liner 114 over oxide layer no andcovering sidewalls and a bottom surface of opening 112. Liner 114 may bedeposited using any conformal deposition method such as chemical vapordeposition (CVD), or the like. Liner 114 may comprise silicon nitride,titanium nitride, titanium oxide, or any material that may be removed ata greater rate than oxide layer no and RDLs 108. In various embodiments,liner 114 may be between about 300 Å and about 1000 Å or more thick.

FIG. 4 illustrates another patterning of first device die 100 to extendopening 112 further into first device die 100. This second patterningmay be achieved, for example, using an anisotropic etching process sothat the vertical dimension of opening 112 is increased withoutsubstantially increasing the horizontal dimensions of opening 112. As aresult of the patterning, lateral portions of liner 114 (e.g., coveringoxide layer 110 and bottom surfaces of opening 112) may be removed. Thatis, a top surface of oxide layer 110 may be exposed. Vertical portionsof liner 114 (e.g., on sidewalls of opening 112) may remain in firstdevice die 100. After the second patterning, liner 114 may onlypartially cover sidewalls of opening 112. Furthermore, as a result ofthe patterning, oxide layer 110 may be thinned. For example, inembodiments where oxide layer 110 was deposited to have a thickness ofabout 5000 Å, after the patterning, oxide layer 110 may have a thicknessof about 2500 Å. Furthermore, because the etching rate of liner 114 maybe greater than the etching rate of oxide layer no, less oxide layer nomay be removed than liner 114 during etching. Thus, a top surface ofoxide layer 110 may or may not be substantially level with a top surfaceof liner 114.

While FIG. 4 illustrates opening 112 extending through oxide layer 110,RDLs 108, and isolation layer 106 into interconnect layers 104, thelayers of first device die 100 that are patterned to extend opening 112may vary depending on a desired depth of opening 112. For example,opening 112 may have a depth from a top surface of first device die 100after expansion of between about 0.2 μm and about 2 μm.

In FIG. 5, remaining portions of liner 114 are selectively removed usingany suitable method, such as an etching process using a chemical etchantthat etches liner 114 at a faster rate than device layers contactingliner 114 (e.g., oxide layer 110 and RDLs 108). For example, a solutionof 85% phosphoric acid (H₃PO₄) may be used when liner 114 comprises SiN,oxide layer 110 comprises SiON, and RDLs 108 comprise USG. The exactchemistry used during etching may vary depending on the materials usedto form the applicable device layers in first device die 100. In variousembodiments, a ratio of removal rates of liner 114 to oxide layer 110 toRDLs 108 may be about 60 to 30 to 1. Furthermore, because oxide layer nomay have a higher removal rate than RDLs 108, sidewalls of oxide layerno may or may not be vertically aligned with sidewalls of RDLs 108 inopening 112.

As a result of removing liner 114, a top portion of opening 112 has ahorizontal dimension W1 that is larger than a horizontal dimension W2 ofa bottom portion of opening 112. Horizontal dimensions W1 and W2 may bea length/width, diameter, or the like depending on a top down shape ofopening 112. In various embodiments, horizontal dimensions W1 and W2 maybe between about 0.1 μm and 10 μm. A difference in dimension between W1and W2 may depend on the thickness of liner 114. For example, inembodiments where liner 114 was about 500 Å thick, W1 may be about 0.1μm larger than W2. Generally, a difference between W1 and W2 may be atleast about 0.05 μm.

FIG. 6 illustrates the filling of opening 112 with a conductive material116, for example, copper or a copper alloy. The filling of opening 112may include an electro-chemical plating (ECP) process. Conductivematerial 116 may overflow opening 112 and cover a top surface of oxidelayer 110. In various embodiments, a barrier layer (not shown) and/or aseed layer (not shown) may be formed, for example, using physical vapordeposition, CVD, or the like in opening 112 prior to the filling ofopening 112 with conductive material 116.

Subsequently, as illustrated by FIG. 7, a planarization (e.g., achemical mechanical polish (CMP)) may be performed to remove overflowportions of conductive material 116 to form conductive pad 118 in firstdevice die 100. The planarization may result in the dishing ofconductive pad 118 (i.e., a top surface of conductive pad 118 may benon-planar and concave). This dishing may be intentional to allow roomfor conductive pad 118 to expand in a subsequent annealing process. Thedishing may remove a depth H1 of conductive pad 118, and theplanarization process may be controlled so that depth H1 is less thanabout 50 Å to ensure proper bonding of first device die 100 to anotherdevice die.

As a result of the process steps illustrated by FIG. 1 through 7,conductive pad 118 is formed in first device die 100. Additionally, inan embodiment, conductive pad 118 is formed of a single continuousmaterial (e.g., copper) having no internal interfaces formed therein.Conductive pad 118 is shaped to include a top portion having ahorizontal dimension W1 and a vertical dimension H2. Conductive pad 118further includes a bottom portion having a horizontal dimension W2 and avertical dimension H3. In various embodiments, horizontal dimension W1is larger than horizontal dimension W2. Horizontal dimensions W1 and W2may be between about 0.1 μm and about wpm. Horizontal dimensions W1 andW2 may be a length/width, diameter, or the like depending on a top-downshape of conductive pad 118. Centerlines of the top and bottom portionsmay be vertically aligned.

In a top down view, conductive pad 118 may have any shape such as asquare, rectangle, circle, oval, or the like. Furthermore, verticaldimensions H1 and H2 of the top and bottom portions of conductive pad118, respectively, may or may not be equal, and vertical dimensions H1and H2 may be between about 0.1 μm and about 1 μm.

Thus, as illustrated by FIG. 7, the shape of conductive pad 118 providesfor additional metallic material in center regions 118A of conductivepad 118 compared to corner regions 118B of conductive pad 118. Thisshape of conductive pad 118 reduces the overall surface stress ofconductive pad 118. For example, in simulations where conductive pad 118comprises copper and the dimensions of W1, W2, H2, and H3 are 1 μm, 0.5μm, 0.5 μm, and 1 μm, respectively, the thermal stress at the surface ofconductive pad 118 is 4.938×10⁻⁵ Newtons. However, in simulations wherethe dimensions of W1, W2, H2, and H3 were 1 μm, 0 μm, 0.5 μm, and 0 μm,respectively, (e.g., where the metallic material was uniformlydistributed), the surface stress of the conductive pad was higher at5.977×10⁻⁵ Newtons. The reduction of surface stress reduces theprobability of forming voids, particularly in corner regions 118B,during subsequent bonding processes. Although FIG. 7 only illustratesfirst device die 100 having a single conductive pad 118, first devicedie 100 may include multiple conductive pads 118 formed simultaneously.

FIGS. 8A through 9 illustrate the bonding of first device die 100 to asecond device die 200 through hybrid bonding. In image sensingtechnologies, second device die 200 may include logical control circuitsfor controlling the pixel array in first device die 100. Second devicedie 200 may include a substrate 202 (e.g., having active devices, notshown), interconnect layers 204 (e.g., forming logic control circuits),an isolation layer 206, RDLs 208, and an oxide layer 210. The variouslayers of second device die 200 may be substantially similar to thelayers of first device die 100, and detailed description of these devicelayers is omitted for brevity. Second device die 200 further includes aconductive pad 218, which may be substantially similar in shape toconductive pad 118.

FIG. 8A illustrates the bonding of oxide layers 110 and 210 using, forexample, a fusion bonding process. In various embodiments, the fusionbonding may be done using a bonding tool 300 illustrated in FIG. 8B. Thebonding may begin by loading first device die 100 and second device die200 into load ports 302A and 302B, respectively. A movement module 304may move first device die 100 to a surface activation module 306. In anembodiment, surface activation module 306 may be a plasma module thatexposes the surface of oxide layer no to a plasma environment.Alternatively, surface activation module 306 may be a wet cleaningmodule that performs a wet clean to activate the surface of oxide layer110. For example, oxide layer no may be cleaned using a procedure suchas an SC-1 or SC-2 cleaning procedure to form a hydrophilic surface. Inyet another alternative, surface activation module 306 may be an etchingmodule that treats the surface of oxide layer no to form a hydrophobicsurface, for example, using an etching solution of hydrogen fluoride(HF) or ammonium fluoride (NH₄F).

Subsequently, movement module 304 may move first device die 100 to acleaning module 308 to clean the surface of oxide layer 110. Movementmodule 304 may move first device die 100 to a bonding module 310 toawait bonding. Movement module 304 may also move second device die 200to surface activation module 306. A similar surface activation treatmentmay be applied to a surface of oxide layer 210 as the treatment appliedto oxide layer 110. For example, a plasma treatment, wet cleaning, oretching may be applied to the surface of oxide layer 210 depending onthe surface activation process used on oxide layer 110. Subsequently,the movement module 304 may move second device die 200 to cleaningmodule 308 to clean the surface of oxide layer 210, and second devicedie 200 may be moved to bonding module 310 for bonding with first devicedie 100.

Bonding module 310 may include an alignment tool to align oxide layers110 and 210 of first device die 100 and second device die 200. Oxidelayers 110 and 210 are then contacted together to begin the hybridbonding procedure. At this stage, conductive pads 118 and 218 may not bebonded, and a void 120 may be disposed between conductive pads 118 and218 due to dishing.

After oxide layer no is in contact with oxide layer 210, a thermalannealing process may be utilized to strengthen the bond between oxidelayers 110 and 210 and to additionally bond conductive pads 118 and 218as illustrated by FIG. 9. The annealing process conditions may includeincreasing the temperature of first and second device dies 100 and 200from room temperature (e.g., about 20° Celsius (C)) to a suitableannealing temperature (e.g., between about 150° C. and about 400° C.) ata rate of 5° C. per minute. The temperature of first and second devicedies 100 and 200 may be maintained at the annealing temperature forabout two hours. The annealing process expands the conductive materialof conductive pads 118 and 218 to fill void 120, bonding conductive pads118 and 218 and electrically connecting first and second device dies 100and 200. As a result of the shape of conductive pads 118 and 218 andreduced surface stress, the bonded conductive pads 118 and 218 may besubstantially free of voids. Furthermore, the reduced surface stress mayallow for the annealing process to be performed in easier processconditions (e.g., at a lower temperature).

FIG. 10 illustrates a process flow 400 for hybrid bonding device dies inaccordance with various embodiments. In step 402, a die (e.g., firstdevice die 100) is patterned to form an opening. The die may include anoxide layer (e.g., oxide layer 110) at a top surface, which may be usedas a bonding interface in hybrid bonding. Next, in step 404, a liner(e.g., liner 114) is formed over the die and covering sidewalls and abottom surface of the opening. The liner may be formed of any materialthat may be selectively removed at a greater rate than any layers offirst device die 100 in physical contact with the liner.

In step 406, another etching is performed in first device die 100 toexpand the opening further into the die, for example, using ananisotropic etching process. The anisotropic etching may notsubstantially expand the opening in a lateral direction. As a result ofthe etching, lateral portions of the liner (e.g., covering a top surfaceof the die and bottom surface of the opening) may be removed. Remainingportions of the liner on sidewalls of the opening may not be removed andmay partially cover sidewalls of the expanded opening.

In step 408, the liner is removed, for example by selecting a chemicaletchant that selectively removes the liner without significantlyremoving other portions of the device die. For example, when the linercomprises SiN and the other device layers in contact with the linercomprise SiON and USG, a solution of 85% phosphoric acid may be used toremove the liner. As a result of removing the liner, a top portion ofthe opening may have a first width that is larger than a second width ofa bottom portion of the opening.

In step 410, the opening is filled with a metallic material (e.g.,copper). The filling of the metallic material may overflow the opening.Subsequently, in step 412, a CMP may be performed to remove excessmetallic material to form a conductive pad. The CMP process may furtherdish a top surface of the conductive pad (i.e., form a non-planar,concave top surface). This dishing may be intentional to allow expansionroom for the conductive pad during a subsequent bonding process. Theresulting conductive pad may have a center portions having additionalconductive material than corner portions. This shape of the resultingconductive pad reduces the thermal stress on a top surface of theconductive pad.

In step 414, the oxide layer of the die may be bonded (e.g., fusionbonded) to an oxide layer of another device die. The other device diemay also have a second conductive pad that is substantially similar,particularly in shape, to the conductive pad formed in steps 402 through412. The bonding of the oxide layers may not bond the conductive pads,and a void may be defined between the conductive pads due to dishing.

Finally, in step 416, an annealing process is performed to bond the twoconductive pads and fill the void. The annealing process may beperformed by ramping up the temperature of the bonded dies from roomtemperature to 300° C. at a rate of 5° C. per minute. The temperature ofthe bonded dies may be maintained at about 300° C. for about two hours.As a result of the shape of the conductive pads and the reduced thermalstress, the resulting bonded conductive pads may be substantially freeof any voids.

FIGS. 11A through 11C illustrate varying views of a bonded first andsecond device dies 100 and 200 in an example embodiment where firstdevice die 100 is a CMOS image sensor (CIS) die and second device die200 is a logic control die. FIG. 11A shows a cross-sectional view, FIG.11B illustrates an in-depth view of the cross-sectional view of FIG.11A, and FIG. 11C illustrates a top down view. First device die 100 mayinclude photodiodes 101, transfer transistors 103, and metallizationlayers 105 (e.g., interconnect layers 104). Metallization layers 105 mayelectrically connect photodiodes 101 and transfer transistors 103 toform functional circuits. These functional circuits may include a pixelarray in a center region of first device die 100 as illustrated by FIG.11C. The functional circuits of first device die 100 may also include ananalogue to digital convertor (ADC) 107, correlated double sampling(CDS) circuits 109, a row decoder in, and the like. As also illustratedby FIG. 11C, a plurality of conductive pads 118 for bonding may bedisposed on peripheral regions of first device die 100.

Second device die 200 may include logic arrays 201 and metallizationlayers 205 (e.g., interconnect layers 204). The metallization layers mayinterconnect logic arrays 201 to form digital signal processing circuits(e.g., application specific integrated circuits (ASIC)) that providecontrol functions for the image sensor formed by first device die 100and second device dies 200 as also illustrated by FIG. 11C. A pluralityof conductive pads 218 may be located at peripheral regions the topsurface of second device die 200.

FIG. 11B illustrates a detailed cross-sectional view of a portion100A/200A of bonded first and second device dies 100 and 200. Hybridbonding may be used to bond oxide layer 110 and conductive pads 118 offirst device die 100 to oxide layer 210 and conductive pads 218 ofsecond device die 200, respectively. Conductive pads 118 and 218 areshaped so that center portions of conductive pads 118 and 218 arethicker (e.g., has more conductive material) than corner regions ofconductive pads 118 and 218. This shape of conductive pads 118 and 218reduces thermal stress at the interface between conductive pads 118 and218, which reduces the formation of voids after hybrid bonding.

In accordance with an embodiment, a method includes patterning anopening through a layer at a surface of a device die. The method furtherincludes forming a liner on sidewalls of the opening, patterning thedevice die to extend the opening further into the device die. Afterpatterning the device die, the liner is removed. A conductive pad isformed in the device die by filling the opening with a conductivematerial.

In accordance with another embodiment, a method includes etching a firstopening through an oxide layer on a surface of a first device die. Thefirst opening has a first horizontal dimension. A liner is formed overthe first device die. The liner covers sidewalls and a bottom surface ofthe first opening. The method further includes etching a second openingconnected to the first opening in the first device die by etchingthrough first portions of the liner on the bottom surface of the firstopening. The second opening has a second horizontal dimension smallerthan the first horizontal dimension. Second portions of the liner onsidewalls of the first opening are removed. A first conductive pad isformed in the first and second openings, and the first device die isbonded to a second device die. The first conductive pad is bonded to asecond conductive pad on a surface of the second device die.

In accordance with yet another embodiment, a device includes an oxidelayer at a top surface of a device die and a conductive pad in thedevice die. The conductive pad includes a top portion at the top surfaceof the first device die having a first horizontal dimension and a bottomportion connected to the top portion with no internal interface betweenthe top portion and the bottom portion. The bottom portion has a secondhorizontal dimension, and the first horizontal dimension is larger thanthe second horizontal dimension.

In accordance with a representative embodiment, a device comprises: afirst oxide layer at a top surface of a first device die; a firstconductive pad in the first device die, wherein the first conductive padcomprises; and a second device die bonded to the first device die. A topportion at the top surface of the first device die has a first lateraldimension, and a bottom portion connected to the top portion, whereinthe bottom portion has a second lateral dimension. The first lateraldimension is larger than the second lateral dimension. The second devicedie comprises: a second oxide layer directly bonded to the first oxidelayer; and a second conductive pad directly bonded to the firstconductive pad. The second conductive pad may have a substantially sameshape as the first conductive pad. The first lateral dimension and thesecond lateral dimension may be between about 0.1 μm and about 10 μm. Adifference between the first lateral dimension and the second lateraldimension may be at least about 0.05 μm. The top portion may have afirst vertical dimension and the bottom portion may have a secondvertical dimension, wherein the first vertical dimension and the secondvertical dimension are between about 0.1 μm and about 1 μm. Centerlinesof the top portion and the bottom portion may be vertically aligned. Thefirst oxide layer may comprise silicon oxynitride.

In accordance with another representative embodiment, a devicecomprises: a first device having an opening through a first layer at asurface of a first device die, wherein the opening extends into thefirst device die; and a first conductive pad in the first device die,the first conductive pad comprising a conductive material in theopening. The opening comprises: a first portion in the first layer; anda second portion under the first portion, wherein the first portion iswider than the second portion. The first layer may comprise siliconoxynitride. The first conductive pad may comprise a substantiallyconcave top surface. A second layer may comprise silicon oxynitride. Asecond conductive pad may comprise a substantially concave top surface.The first device die may be hybrid bonded to a second device die,wherein the first layer is fusion bonded to the second layer disposed ona surface of the second device die and the first conductive pad ismetal-to-metal bonded to the second conductive pad in the second devicedie.

In yet another representative embodiment, a device comprises: a firstopening extending through a first dielectric layer at a top surface of afirst die. The first opening comprises: a first portion in the firstdielectric layer; and a second portion under the first portion, whereinthe first portion is wider than the second portion. The device furthercomprises: a first conductive pad in the first opening; a second diecomprising a second conductive pad extending through a second dielectriclayer at a top surface of the second die, wherein the first conductivepad is aligned to the second conductive pad; and the first dielectriclayer bonded to the second dielectric layer. The second conductive padcomprises a first width in the second dielectric layer and a secondwidth under the second dielectric layer, wherein the first width isgreater than the second width. The first conductive pad may be disposedat a peripheral region of the first die, and the second conductive padmay be disposed at a peripheral region of the second die. The firstconductive pad and the second conductive pad may have a substantiallysame shape. A top surface of the first conductive pad may have a dishedsurface profile. The dished surface profile may have a height differencebetween the top surface of the first conductive pad and a top surface ofthe first dielectric layer of less than about 50 Å. The first conductivepad may be electrically coupled to the second conductive pad. At leastone of the first dielectric layer or the second dielectric layer maycomprise silicon oxynitride.

While this invention has been described with reference to illustrativeembodiments, this description is not intended to be construed in alimiting sense. Various modifications and combinations of theillustrative embodiments, as well as other embodiments of the invention,will be apparent to persons skilled in the art upon reference to thedescription. It is therefore intended that the appended claims encompassany such modifications or embodiments.

What is claimed is:
 1. A device comprising: a first oxide layer at a topsurface of a first device die; a redistribution layer (RDL) under thefirst oxide layer; a first conductive pad in the first device die,wherein the first conductive pad comprises: a top portion at the topsurface of the first device die, the top portion having a first lateraldimension, wherein a first portion of the top portion is disposedlaterally adjacent the first oxide layer, and a second portion of thetop portion is disposed laterally adjacent the RDL; a bottom portionconnected to the top portion, wherein the bottom portion has a secondlateral dimension, wherein the first lateral dimension is larger thanthe second lateral dimension, and wherein a bottommost surface of thebottom portion is below a bottommost surface of the RDL; and a seconddevice die bonded to the first device die, the second device diecomprising: a second oxide layer directly bonded to the first oxidelayer; and a second conductive pad directly bonded to the firstconductive pad.
 2. The device of claim 1, wherein the second conductivepad has a substantially same shape as the first conductive pad.
 3. Thedevice of claim 1, wherein the first lateral dimension and the secondlateral dimension are between about 0.1 μm and about 10 μm, and whereina difference between the first lateral dimension and the second lateraldimension is at least about 0.05 μm.
 4. The device of claim 1, whereinthe top portion has a first vertical dimension and the bottom portionhas a second vertical dimension, and wherein the first verticaldimension and the second vertical dimension are between about 0.1 μm andabout 1 μm.
 5. The device of claim 1, wherein centerlines of the topportion and the bottom portion are vertically aligned.
 6. The device ofclaim 5, wherein the first oxide layer comprises silicon oxynitride. 7.A device comprising: a first device having an opening through a firstlayer at a surface of a first device die, wherein the opening extendsinto the first device die; and a first conductive pad in the firstdevice die, the first conductive pad comprising a conductive material inthe opening, wherein the opening comprises: a first portion in the firstlayer; and a second portion in a second layer, the second portion underthe first portion, wherein: the second layer comprises a redistributionlayer (RDL), an isolation layer and an interconnect layer, the isolationlayer being interposed between the RDL and the interconnect layer; theisolation layer is different than the interconnect layer; the isolationlayer is different than the RDL; the isolation layer is different thanthe first layer; and the first portion is wider than the second portion,the second portion extending through the RDL and the isolation layer,and into the interconnect layer.
 8. The device of claim 7, wherein thefirst layer comprises silicon oxynitride.
 9. The device of claim 8,wherein the first conductive pad comprises a substantially concave topsurface.
 10. The device of claim 7, further comprising the first devicedie hybrid bonded to a second device die, wherein the first layer isfusion bonded to a third layer disposed on a surface of the seconddevice die, and the first conductive pad is metal-to-metal bonded to asecond conductive pad in the second device die.
 11. The device of claim10, wherein the third layer comprises silicon oxynitride.
 12. The deviceof claim 11, wherein the second conductive pad comprises a substantiallyconcave top surface.
 13. A device comprising: a first opening extendingthrough a first dielectric layer at a top surface of a first die,wherein the first opening comprises: a first portion in the firstdielectric layer and a redistribution layer (RDL); and a second portionin the RDL and an isolation layer, the second portion being under thefirst portion, wherein the RDL is different than the isolation layer,the RDL is different than the first dielectric layer, the RDL isinterposed between the first dielectric layer and the isolation layer, abottommost surface of the first portion is interposed between a topmostsurface of the RDL and a topmost surface of the isolation layer, abottommost surface of the second portion is below a bottommost surfaceof the isolation layer, and the first portion is wider than the secondportion; a first conductive pad in the first opening; a second diecomprising a second conductive pad extending through a second dielectriclayer at a top surface of the second die, wherein the first conductivepad is aligned to the second conductive pad; and the first dielectriclayer bonded to the second dielectric layer.
 14. The device of claim 13wherein the second conductive pad comprises a first width in the seconddielectric layer and a second width under the second dielectric layer,wherein the first width is greater than the second width.
 15. The deviceof claim 13, wherein the first conductive pad is disposed at aperipheral region of the first die, and the second conductive pad isdisposed at a peripheral region of the second die.
 16. The device ofclaim 13, wherein the first conductive pad and the second conductive padhave a substantially same shape.
 17. The device of claim 16, wherein atop surface of the first conductive pad has a dished surface profile.18. The device of claim 17, wherein the dished surface profile has aheight difference between the top surface of the first conductive padand a top surface of the first dielectric layer of less than about 50 Å.19. The device of claim 17, wherein the first conductive pad iselectrically coupled to the second conductive pad.
 20. The device ofclaim 13, wherein at least one of the first dielectric layer or thesecond dielectric layer comprises silicon oxynitride.